Consideration of contribution of hot-electron injection to the resistive switching of sputter-deposited silicon oxide film

<p>This paper considers the contribution of hot electrons to resistive switching sputter-deposited silicon oxide films based on experiments together with semi-2D Monte Carlo simulations. Using various device stack structures, this examines impact hot-electron injection switching, where conduction-band offset and fermi-level difference are utilized. Support is found for predictions that reduces voltage should reduce dissipation energy switching. It predicted two-layer metal stacks can significantly number oxygen vacancies in film after reset process. also demonstrated that, unipolar E’ or E” centers relatively large.</p>